FDMA291P Single P-Channel 1.8V Specified PowerTrench
®
MOSFET
June 2008
FDMA291P
tm
Single P-Channel 1.8V Specified PowerTrench
®
MOSFET
General Description
This device is designed specifically for battery charge
or load switching in cellular handset and other ultra-
portable applications. It features a MOSFET with low
on-state resistance.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
•
–6.6 A, –20V. r
DS(ON)
= 42 mΩ @ V
GS
= –4.5V
r
DS(ON)
= 58 mΩ @ V
GS
= –2.5V
r
DS(ON)
= 98 mΩ @ V
GS
= –1.8V
•
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
Pin 1
Drain
D
D
G
Source
Bottom Drain Contact
D
1
D
2
G
3
6
D
5
D
4
S
D
D
S
MicroFET 2x 2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
W
°C
–6.6
–24
2.4
0.9
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
52
145
°C/W
Package Marking and Ordering Information
Device Marking
291
Device
Reel Size
7’’
FDMA291P
Tape width
8mm
Quantity
3000 units
©2008
Fairchild Semiconductor Corporation
FDMA291P Rev B3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
