FDMC2610 N-Channel UltraFET Trench
®
MOSFET
January 2007
FDMC2610
N-Channel UltraFET Trench
®
MOSFET
200V, 9.5A, 200mΩ
Features
General Description
Max r
DS(on)
= 200mΩ at V
GS
= 10V, I
D
= 2.2A
Max r
DS(on)
= 215mΩ at V
GS
= 6V, I
D
= 1.5A
Low Profile - 1mm max in a Power 33
RoHS Compliant
tm
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s
advanced
Power
Trench
process. It has been optimized for power management
applications.
Application
DC - DC Conversion
Bottom
Top
5
6
7
8
D
1
D
D
D
D
D
G
5
6
7
8
4
G
3
S
2
S
1
S
D
D
4
3
2
S
S
S
Power 33
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
T
C
= 25°C
T
A
= 25°C
(Note 1a)
T
C
= 25°C
T
A
= 25°C
(Note 1a)
Parameter
Ratings
200
±20
9.5
2.2
15
42
2.1
-55 to +150
W
°C
A
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3
60
°C/W
Package Marking and Ordering Information
Device Marking
FDMC2610
Device
FDMC2610
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMC2610 Rev.C
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
