FDMC4435BZ P-Channel Power Trench
®
MOSFET
February 2008
FDMC4435BZ
P-Channel Power
-30V, -18A, 20.0mΩ
Features
Max r
DS(on)
= 20.0mΩ at V
GS
= -10V, I
D
= -8.5A
Max r
DS(on)
= 37.0mΩ at V
GS
= -4.5V, I
D
= -6.3A
Extended V
GSS
range (-25V) for battery applications
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
HBM ESD protection level >7kV typical (Note 4)
100% UIL Tested
Termination is Lead-free and RoHS Compliant
Trench
®
tm
MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance. This
devie is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Bottom
Top
Pin 1
S
S
D
S
G
D
D
D
D
D
D
D
6
7
8
3
2
1
S
S
S
5
4
G
Power 33
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25°C
T
A
= 25°C
(Note 1a)
(Note 3)
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
(Note 1a)
Parameter
Ratings
-30
±25
-18
-31
-8.5
-50
24
31
2.3
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
4
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC4435BZ
Device
FDMC4435BZ
Package
Power 33
1
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMC4435BZ Rev.C
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
