FDMC510P P-Channel PowerTrench
®
MOSFET
June 2010
FDMC510P
P-Channel PowerTrench
®
MOSFET
-20 V, -18 A, 8.0 mΩ
Features
Max r
DS(on)
= 8.0 mΩ at V
GS
= -4.5 V, I
D
= -12 A
Max r
DS(on)
= 9.8 mΩ at V
GS
= -2.5 V, I
D
= -10 A
Max r
DS(on)
= 13 mΩ at V
GS
= -1.8 V, I
D
= -9.3 A
Max r
DS(on)
= 17 mΩ at V
GS
= -1.5 V, I
D
= -8.3 A
High performance trench technology for extremely low r
DS(on)
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
HBM ESD capability level >2 KV typical (Note 4)
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been optimized for r
DS(ON)
, switching performance and
ruggedness.
Applications
Battery Management
Load Switch
Top
Pin 1
S
S
S
G
Bottom
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
Parameter
Ratings
-20
±8
-18
-54
-12
-50
37
41
2.3
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC510P
Device
FDMC510P
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDMC510P Rev.C5
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
