FDMC7696 N-Channel PowerTrench
®
MOSFET
November 2011
FDMC7696
N-Channel PowerTrench
®
MOSFET
30 V, 12 A, 11.5 mΩ
Features
Max r
DS(on)
= 11.5 mΩ at V
GS
= 10 V, I
D
= 12 A
Max r
DS(on)
= 14.5 mΩ at V
GS
= 4.5 V, I
D
= 10 A
High performance technology for extremely low r
DS(on)
Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance.This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
DC/DC Buck Converters
Notebook battery power management
Load Switch in Notebook
Top
Bottom
8
7
6
5
D D D D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
1
2 3 4
G S S S
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25°C
T
A
= 25°C
(Note 1a)
(Note 3)
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
(Note 1a)
(Note 4)
Parameter
Ratings
30
±20
20
38
12
50
21
25
2.4
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
5.0
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7696
Device
FDMC7696
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC7696 Rev.C8
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
