FDMC8884 N-Channel Power Trench
®
MOSFET
May 2008
FDMC8884
N-Channel Power
30V, 15A, 19mΩ
Features
Max r
DS(on)
= 19mΩ at V
GS
= 10V, I
D
= 9.0A
Max r
DS(on)
= 30mΩ at V
GS
= 4.5V, I
D
= 7.2A
High performance trchnology for extremely low r
DS(on)
Termination is Lead-free and RoHS Compliant
Trench
®
tm
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top
Bottom
S
Pin 1
S
S
D
G
D
D
D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
Power 33
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
T
C
= 25°C
T
A
= 25°C
(Note 1a)
(Note 3)
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
(Note 1a)
Parameter
Ratings
30
±20
15
24
9.0
40
24
18
2.3
-55 to +150
mJ
W
°C
A
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
6.6
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8884
Device
FDMC8884
Package
Power 33
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMC8884 Rev.C
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
