FDMS8692 N-Channel PowerTrench
®
MOSFET
July 2007
FDMS8692
N-Channel PowerTrench
®
MOSFET
30V, 28A, 9.0mΩ
Features
Max r
DS(on)
= 9.0mΩ at V
GS
= 10V, I
D
= 12A
Max r
DS(on)
= 14.0mΩ at V
GS
= 4.5V, I
D
= 10.5A
Advanced Package and Silicon combination for
low r
DS(on)
and high efficiency
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8692 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
Applications
High Side for Synchronous Buck to Power Core Processor
Secondary Side Synchronous Rectifier
High Side Switch in POL DC/DC Converter
Oring FET/ Load Switch
Pin 1
S
S
S
D
G
D
D
D
D
D
Power 56 (Bottom view)
D
5
6
7
8
4
3
2
1
G
S
S
S
D
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25°C
T
A
= 25°C
(Note 1a)
(Note 3)
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
(Note 1a)
Parameter
Ratings
30
±20
28
48
12
120
150
41
2.5
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.0
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8692
Device
FDMS8692
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDMS8692 Rev.C
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
