FDN306P
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
–2.6 A, –12 V.
R
DS(ON)
= 40 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 50 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 80 mΩ @ V
GS
= –1.8 V
Applications
•
Battery management
•
Load switch
•
Battery protection
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
SuperSOT
TM
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
SuperSOT -3
TM
G
T
A
=25
o
C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Parameter
Ratings
–12
±8
(Note 1a)
Units
V
V
A
W
°C
–
2.6
–
10
0.5
0.46
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
306
Device
FDN306P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
FDN306P Rev D (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
