Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
I
D
= -250 µA, Referenced to 25
o
C
V
DS
= -16 V, V
GS
= 0 V
T
J
= 55°C
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
(Note 2)
-20
-16
-1
-10
100
-100
V
mV /
o
C
µA
µA
nA
nA
∆
BV
DSS
/
∆
T
J
I
DSS
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250 µA
I
D
= -250 µA, Referenced to 25
o
C
V
GS
= -4.5 V, I
D
= -1.3 A
T
J
=125°C
V
GS
= -2.5 V, I
D
= -1.1 A
-0.4
-0.9
3
0.122
0.18
0.19
-5
4
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
-1.5
V
mV /
o
C
∆
V
GS(th)
/
∆
T
J
R
DS(ON)
0.2
0.32
0.27
Ω
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Note:
On-State Drain Current
Forward Transconductance
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -4.5 V, I
D
= -2 A
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
A
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
330
80
35
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -5 V, I
D
= -0.5 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
7
12
16
5
15
22
26
12
5
ns
ns
ns
ns
nC
nC
nC
V
DS
= -10 V, I
D
= - 2 A,
V
GS
= -4.5 V
3.6
0.8
0.7
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.42 A
(Note)
-0.42
-0.7
-1.2
A
V
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
a. 250
o
C/W when mounted on
a 0.02 in
2
pad of 2oz Cu.
b. 270
o
C/W when mounted on
a 0.001 in
2
pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDN336P Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
