FDN361AN
April 1999
FDN361AN
N-Channel, Logic Level, PowerTrench
ΤΜ
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
Features
•
1.8 A, 30 V. R
DS(on)
= 0.100
Ω
•
•
•
@ V
GS
= 10 V
R
DS(on)
= 0.150
Ω
@ V
GS
= 4.5 V.
Low gate charge ( 2.1nC typical ).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with
30% higher power handling capability.
Applications
•
DC/DC converter
•
Load switch
•
Motor drives
•
D
D
S
SuperSOT -3
TM
G
T
A
=25 C unless otherwise noted
o
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Parameter
Gate-Source Voltage - Continuous
Drain Current
- Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1a)
FDN361AN
30
±
20
1.8
8
0.5
0.46
-55 to +150
Units
V
V
A
W
°
C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
361
Device
FDN361AN
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
1998
Fairchild Semiconductor Corporation
FDN361AN, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
