FDP150N10 N-Channel PowerTrench® MOSFET
July 2008
FDP150N10
100V, 57A, 15mΩ
Features
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
®
tm
• R
DS(on)
= 12mΩ ( Typ.) @ V
GS
= 10V, I
D
= 49A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
DS(on)
• High power and current handling capability
• RoHS compliant
Application
• DC to DC convertors / Synchronous Rectification
D
G
G DS
TO-220
FDP Series
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
o
Parameter
Ratings
100
±20
o
Units
V
V
A
A
A
mJ
V/ns
W
W/
o
C
o
C
o
C
-Continuous (T
C
= 25 C)
-Continuous (T
C
=
- Pulsed
100
o
C)
(Note 1)
(Note 2)
(Note 3)
- Derate above 25 C
57
40
228
132
7.5
110
0.88
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
1.13
0.5
62.5
o
Units
C/W
©2008 Fairchild Semiconductor Corporation
FDP150N10 Rev. A
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
