欢迎访问ic37.com |
会员登录 免费注册
发布采购

FDP2532 参数 Datasheet PDF下载

FDP2532图片预览
型号: FDP2532
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的150V , 79A , 16mз [N-Channel PowerTrench MOSFET 150V, 79A, 16mз]
分类和应用:
文件页数/大小: 11 页 / 269 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDP2532的Datasheet PDF文件第2页浏览型号FDP2532的Datasheet PDF文件第3页浏览型号FDP2532的Datasheet PDF文件第4页浏览型号FDP2532的Datasheet PDF文件第5页浏览型号FDP2532的Datasheet PDF文件第6页浏览型号FDP2532的Datasheet PDF文件第7页浏览型号FDP2532的Datasheet PDF文件第8页浏览型号FDP2532的Datasheet PDF文件第9页  
FDB2532 / FDP2532 / FDI2532
August 2002
FDB2532 / FDP2532 / FDI2532
N-Channel PowerTrench
®
MOSFET
150V, 79A, 16mΩ
Features
• r
DS(ON)
= 14mΩ (Typ.), V
GS
= 10V, I
D
= 33A
• Q
g
(tot) = 82nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Q
RR
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82884
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
D
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
TO-220AB
FDP SERIES
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
TO-262AB
FDI SERIES
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100 C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θJA
= 43
o
C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
Parameter
Ratings
150
±20
79
56
8
Figure 4
400
310
2.07
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-220, TO-263, TO-262
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2
0.48
62
43
o
o
o
C/W
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDB2532 / FDP2532 / FDI2532 Rev. B