FDP3672
September 2003
FDP3672
N-Channel PowerTrench
®
MOSFET
105V, 41A, 33mΩ
Features
• r
DS(ON)
= 25mΩ (Typ.), V
GS
= 10V, I
D
= 41A
• Q
g
(tot) = 28nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Q
RR
Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
Formerly developmental type 82760
D
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
G
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 10V, R
θJA
=
62
o
C/W)
41
31
5.9
Figure 4
48
135
0.9
-55 to 175
A
A
A
A
mJ
W
W/
o
C
o
Parameter
Ratings
105
±20
Units
V
V
C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 (Note 2)
1.11
62
o
o
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDP3672 Rev. A3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
