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FDP39N20 参数 Datasheet PDF下载

FDP39N20图片预览
型号: FDP39N20
PDF下载: 下载PDF文件 查看货源
内容描述: 200V N沟道MOSFET [200V N-Channel MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 8 页 / 901 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Performance Characteristics (Continued)  
Figure 7. Breakdown Voltage Variation  
vs. Temperature  
Figure 8. On-Resistance Variation  
vs. Temperature  
3.0  
2.5  
2.0  
1.5  
1.2  
1.1  
1.0  
1.0  
Notes :  
1. VGS = 0 V  
0.9  
Notes :  
1. VGS = 10 V  
2. ID = 250 A  
0.5  
2. ID = 19.5 A  
0.8  
-100  
0.0  
-100  
-50  
0
50  
100  
150  
200  
-50  
0
50  
100  
150  
200  
T, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
J
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs. Case Temperature  
103  
40  
30  
20  
10  
0
10 µs  
102  
100 µs  
1 ms  
10 ms  
101  
100 ms  
DC  
Operation in This Area  
is Limited by R DS(on)  
100  
Notes :  
1. TC = 25 o  
2. TJ = 150 o  
C
-1  
10  
C
3. Single Pulse  
-2  
10  
100  
101  
102  
25  
50  
75  
100  
125  
150  
TC, Case Temperature []  
VDS, Drain-Source Voltage [V]  
Figure 11. Transient Thermal Response Curve  
D =0 .5  
1 0 -1  
0 .2  
0 .1  
N ote s  
:
1 . Z (t)  
=
0.5  
2 . D u ty F ac to r, D = t1 /t2  
3 . T JM T C P D M Z (t)  
/W M ax.  
JC  
-
=
*
JC  
0 .0 5  
PDM  
0.02  
0 .01  
t1  
1 0 -2  
t2  
sin gle p ulse  
1 0 -3  
1 0 -5  
1 0 -4  
1 0 -2  
1 0 -1  
1 0 0  
1 0 1  
t1 , S q u a re W a ve P u lse D u ra tio n [se c]  
4
www.fairchildsemi.com  
FDP39N20 Rev. A