FDP8896
November 2004
FDP8896
N-Channel PowerTrench
®
MOSFET
30V, 92A, 5.9mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
• r
DS(ON)
= 5.9mΩ V
GS
= 10V, I
D
= 35A
,
• r
DS(ON)
= 7.0mΩ V
GS
= 4.5V, I
D
= 35A
,
• High performance trench technology for extremely low
r
DS(ON)
• Low gate charge
Applications
• DC/DC converters
• High power and current handling capability
DRAIN
(FLANGE)
D
SOURCE
DRAIN
GATE
G
S
TO-220AB
FDP SERIES
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
I
D
Continuous (T
C
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 4.5V) (Note 1)
V
GS
= 10V, with R
θJA
=
62
o
C/W)
Continuous (T
amb
=
25
o
C,
92
85
16
Figure 4
74
80
0.53
-55 to 175
A
A
A
A
mJ
W
W/
o
C
o
C
Parameter
Ratings
30
±20
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
1.88
62
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDP8896
FDP8896
Device
FDP8896
FDP8896_NL (Note 4)
Package
TO-220AB
TO-220AB
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
©2004 Fairchild Semiconductor Corporation
FDP8896 Rev. A1