FDP18N50 / FDPF18N50 500V N-Channel MOSFET
April 2007
FDP18N50 / FDPF18N50
500V N-Channel MOSFET
Features
• 18A, 500V, R
DS(on)
= 0.265Ω @V
GS
= 10 V
• Low gate charge ( typical 45 nC)
• Low C
rss
( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FDP18N50
500
18
10.8
72
±30
945
18
FDPF18N50
18 *
10.8
∗
72
∗
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
23.5
4.5
235
1.88
-55 to +150
300
38.5
0.3
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP18N50
0.53
0.5
62.5
FDPF18N50
3.3
--
62.5
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP18N50 / FDPF18N50 Rev. B