FDR838P
March 1999
FDR838P
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Features
•
•
•
•
•
-8 A, -20 V. R
DS(
ON
)
= 0.017
Ω
@ V
GS
= -4.5 V
R
DS(
ON)
= 0.024
Ω
@ V
GS
= -2.5 V
Low gate charge (30nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
Applications
•
•
•
Load switch
Motor driving
Power Management
D
S
D
S
5
6
G
4
3
2
1
7
8
SuperSOT -8
TM
D
D
D
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
Ratings
-20
(Note 1a)
Units
V
V
A
W
±
8
-8
-50
1.8
1.0
0.9
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
Device
FDR838P
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
.
838P
©1999
Fairchild Semiconductor Corporation
FDR838P, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
