FDS2672 N-Channel UltraFET Trench
®
MOSFET
August 2006
FDS2672
N-Channel UltraFET Trench
®
MOSFET
200V, 3.9A, 70mΩ
Features
Max r
DS(on)
=
70mΩ at V
GS
= 10V, I
D
= 3.9A
Max r
DS(on)
=
80mΩ at V
GS
= 6V, I
D
= 3.5A
Fast switching speed
High performance trench technology for extremely low
r
DS(on)
RoHS compliant
tm
General Description
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench
®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
DC-DC conversion
D
SO-8
D
D
D
5
6
7
4
3
2
1
Pin 1
S
S
S
G
8
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Temperature
(Note 3)
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
200
±20
3.9
50
37.5
2.5
1.0
-55 to 150
Units
V
V
A
mJ
W
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
(Note 1b)
25
50
125
°C/W
Package Marking and Ordering Information
Device Marking
FDS2672
Device
FDS2672
Reel Size
13’’
1
Tape Width
12mm
Quantity
2500 units
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©2006 Fairchild Semiconductor Corporation
FDS2672 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
