FDS3812
May 2001
FDS3812
80V N-Channel Dual PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
3.4 A, 80 V.
R
DS(ON)
= 74 mΩ @ V
GS
= 10 V
R
DS(ON)
= 84 mΩ @ V
GS
= 6 V
•
Fast switching speed
•
Low gate charge (13nC typ)
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
D1
D1
D2
D2
S1
G1
5
6
7
Q1
4
3
2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
80
±
20
(Note 1a)
Units
V
V
A
W
3.4
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1.0
0.9
–55 to +175
°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS3812
Device
FDS3812
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor Corporation
FDS3812 Rev B1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
