FDS4685 40V P-Channel PowerTrench
®
MOSFET
June 2005
FDS4685
40V P-Channel PowerTrench
®
MOSFET
Features
■
–8.2 A, –40 V R
DS(ON)
= 0.027
Ω
@ V
GS
= –10 V
R
DS(ON)
= 0.035
Ω
@ V
GS
= –4.5 V
■
Fast switching speed
■
High performance trench technology for extremely low
R
DS(ON)
■
High power and current handling capability
Applications
■
Power management
■
Load switch
■
Battery protection
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild
Semiconductor’s advanced PowerTrench process. It has been
optimized for power management applications requiring a wide
range of gate drive voltage ratings (4.5V – 20V).
D
D
D
D
5
6
4
3
2
1
SO-8
Pin 1
S
S
S
G
7
8
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
R
θ
JA
R
θ
JA
R
θ
JC
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
–40
±
20
–8.2
–50
2.5
1.4
1.2
–55 to +150
Units
V
V
A
W
°
C
°
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking
FDS4685
Device
FDS4685
Reel Size
13”
Tape width
12mm
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS4685 Rev. C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
