FDS6375
September 2001
FDS6375
P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P
-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 8V).
Features
•
–8 A, –20 V. R
DS(ON)
= 24 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 32 mΩ @ V
GS
= –2.5 V
•
Low gate charge (26 nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
•
High current and power handling capability
Applications
•
Power management
•
Load switch
•
Battery protection
D
D
SO-8
DD
DD
D
D
5
6
7
4
3
2
1
Pin 1
SO-8
G
S G
S S
S S
S
T
A
=25
o
C unless otherwise noted
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
W
–8
–50
2.5
1.2
1.0
–55 to +175
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6375
Device
FDS6375
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2001
Fairchild Semiconductor Corporation
FDS6375 Rev E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
