FDS6670AS
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6670AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
I
DSS
, REVERSE LEAKAGE CURRENT (A)
0.01
125
o
C
0.001
100
o
C
CURRENT : 0.4A/div
0.0001
25
o
C
0.00001
0
10
20
V
DS
, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 12. FDS6670AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6670A).
CURRENT : 0.4A/div
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
FDS6670AS Rev A (X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
