April 1998
FDS6680
Single N-Channel Logic Level PWM Optimized PowerTrench
TM
MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
Features
11.5 A, 30 V. R
DS(ON)
= 0.010
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.015
Ω
@ V
GS
= 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching.
Low gate charge (typical Qg = 19 nC).
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless other wise noted
FDS6680
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
30
±20
11.5
50
2.5
1.2
1
-55 to 150
V
V
A
W
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
FDS6680 Rev.E1
© 1998 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
