FDS6682
December 2001
FDS6682
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
Features
•
14 A, 30 V.
R
DS(ON)
= 7.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 9.0 mΩ @ V
GS
= 4.5 V
•
Low gate charge (22 nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
DC/DC converter
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±16
(Note 1a)
Units
V
V
A
W
14
50
2.5
1.2
1.0
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6682
Device
FDS6682
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor Corporation
FDS6682 Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
