FDS6699S 30V N-Channel PowerTrench
®
SyncFET™
January 2005
FDS6699S
30V N-Channel PowerTrench
®
SyncFET™
Features
■
21 A, 30 V
Max R
DS(ON)
= 3.6 m
Ω
@ V
GS
= 10 V
Max R
DS(ON)
= 4.5 m
Ω
@ V
GS
= 4.5 V
■
Includes SyncFET Schottky body diode
■
High performance trench technology for extremely low
R
DS(ON)
and fast switching
■
High power and current handling capability
■
100% R
G
(Gate Resistance) tested
General Description
The FDS6699S is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low R
DS(ON)
and low gate charge. The
FDS6699S includes an integrated Schottky diode using Fair-
child’s monolithic SyncFET technology.
Applications
■
Synchronous Rectifier for DC/DC Converters –
■
Notebook Vcore low side switch
■
Point of Load low side switch
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
R
θ
JA
R
θ
JC
Operating and Storage Junction Temperature Range
(Note 1a)
Parameter
Ratings
30
±
20
21
105
2.5
1.2
1
–55 to +125
Units
V
V
A
W
°
C
°
C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Marking and Ordering Information
Device Marking
FDS6699S
Device
FDS6699S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDS6699S Rev. D