FDS6673BZ P-Channel PowerTrench
®
MOSFET
January 2006
FDS6673BZ
P-Channel PowerTrench
®
MOSFET
-30V, -14.5A, 7.8mΩ
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load
switching
applications
common
in
Notebook
Computers and Portable Battery Packs.
Features
Max r
DS(on)
= 7.8mΩ, V
GS
= -10V, I
D
= -14.5A
Max r
DS(on)
= 12mΩ, V
GS
= -4.5V, I
D
= -12A
Extended V
GS
range (-25V) for battery applications
HBM ESD protection level of
6.5kV
typical (note 3)
High performance trench technology for extremely low
r
DS(on)
High power and current handling capability
RoHS compliant
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
Operating and Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation for Single Operation
(Note1a)
(Note1b)
(Note1c)
(Note1a)
Parameter
Ratings
-30
±25
-14.5
-75
2.5
1.2
1.0
-55 to 150
°C
W
Units
V
V
A
A
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS6673BZ Rev. B
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
