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FDS6675 参数 Datasheet PDF下载

FDS6675图片预览
型号: FDS6675
PDF下载: 下载PDF文件 查看货源
内容描述: 单P沟道逻辑电平MOSFET PowerTrenchTM [Single P-Channel, Logic Level, PowerTrenchTM MOSFET]
分类和应用:
文件页数/大小: 5 页 / 117 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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October 1998
FDS6675
Single P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate charge
for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-11 A, -30 V. R
DS(ON)
= 0.014
@ V
GS
= -10 V,
R
DS(ON)
= 0.020
@ V
GS
= -4.5 V.
Low gate charge (30nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
D
D
D
5
4
3
2
1
S
FD 75
66
pin
1
6
G
7
8
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless otherwise noted
FDS6675
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
-30
±20
-11
-50
2.5
1.2
1
-55 to 150
V
V
A
W
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
FDS6675 Rev.C1