FDS6900AS
May 2005
FDS6900AS
General Description
Dual N-Ch PowerTrench
®
SyncFET
™
Features
•
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
R
DS(on)
= 22mΩ @ V
GS
= 10V
R
DS(on)
= 28mΩ @ V
GS
= 4.5V
•
Q1:
Optimized for low switching losses
Low Gate Charge (11nC typical)
R
DS(on)
= 27mΩ @ V
GS
= 10V
R
DS(on)
= 34mΩ @ V
GS
= 4.5V
•
100% R
G
(Gate Resistance) Tested
The FDS6900AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6900AS contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
8.2A, 30V
6.9A, 30V
S1D2
D
S1D2
D
S1D2
D
G1
D
1
2
3
Q2
Q1
8
7
6
5
Dual N-Channel SyncFet
SO-8
Pin 1
SO-
D1
D1
S
S2
G2
G
4
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25°C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30
±20
6.9
20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain Current
±20
8.2
30
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6900AS
FDS6900AS
Device
FDS6900AS
FDS6900AS_NL
(Note 4)
Reel Size
13”
13”
Tape width
12mm
12mm
Quantity
2500 units
2500 units
FDS6900AS Rev
B(X)
©2005
Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
