FDS7760A
February 2000
PRELIMINARY
FDS7760A
N-Channel Logic Level PowerTrench
®
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
•
15 A, 30 V. R
DS(ON)
= 5.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 8 mΩ @ V
GS
= 4.5 V.
•
Low gate charge (37nC typical)
•
Fast switching speed.
•
High performance trench technology for extremely
low R
DS(ON)
.
•
High power and current handling capability.
Applications
•
DC/DC converter
•
Load switch
•
Motor drives
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
15
60
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Device
FDS7760A
(Note 1a)
(Note 1c)
(Note 1)
50
50 (10 sec)
30
Tape Width
12mm
°C/W
°C/W
°C/W
Quantity
2500 units
FDS7760A Rev. B (W)
Package Outlines and Ordering Information
Device Marking
FDS7760A
1999
Fairchild Semiconductor Corporation
Reel Size
13’’
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
