FDS8433A
October 1998
PRELIMINARY
FDS8433A
Single P-Channel 2.5V Specified MOSFET
General Description
This P-Channel enhancement mode power field effect
transistors is produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density processis especially tailored to minimize
on-state resistance and provide superior switching
performance.
Features
•
-5 A, -20 V. R
DS(on)
= 0.045
Ω
@ V
GS
= -4.5 V
R
DS(on)
= 0.070
Ω
@ V
GS
= -2.5 V
•
•
•
Fast switching speed.
High density cell design for extremely low R
DS(on)
.
High power and current handling capability.
Applications
•
•
•
Load switch
DC/DC converter
Battery protection
D
D
D
D
5
6
7
4
3
2
1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
FDS8433A
-20
(Note 1a)
Units
V
V
A
W
±
8
-5
-50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
FDS8433A
Device
FDS8433A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©1998
Fairchild Semiconductor Corporation
FDS8433A Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
