FDS8884 N-Channel PowerTrench
®
MOSFET
February 2006
FDS8884
N-Channel PowerTrench
®
MOSFET
30V, 8.5A, 23mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
A
REE
I
DF
Features
Max r
DS(on)
= 23mΩ at V
GS
= 10V, I
D
= 8.5A
Max r
DS(on)
= 30mΩ at V
GS
= 4.5V, I
D
= 7.5A
Low gate charge
100% R
G
Tested
RoHS Compliant
M
E
N
TA
TIO
L
E
N
MP
LE
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
MOSFET Maximum Ratings
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Pulsed
T
A
= 25°C unless otherwise noted
Parameter
Ratings
30
±20
(Note 1a)
(Note 2)
8.5
40
32
2.5
20
-55 to 150
Units
V
V
A
A
mJ
W
mW/
o
C
o
Single Pulse Avalanche Energy
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
C
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
(Note 1)
50
25
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS8884
Device
FDS8884
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS8884 Rev. A
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
