FDS9431A
September 1999
FDS9431A
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.
Features
•
-3.5 A, -20 V. R
DS(ON)
= 0.130
Ω
@ V
GS
= -4.5 V
R
DS(ON)
= 0.180
Ω
@ V
GS
= -2.5 V.
•
•
•
Fast switching speed.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability.
Applications
•
•
•
•
DC/DC converter
Power management
Load switch
Battery protection
D
D
D
D
5
6
7
4
3
2
1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
-20
±8
(Note 1a)
Units
V
V
A
W
-3.5
-18
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
qJA
R
qJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS9431A
1999
Fairchild Semiconductor Corporation
Device
FDS9431A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS9431A Rev. A2
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
