FDS9945
February 2001
FDS9945
60V N-Channel PowerTrench
®
MOSFET
General Description
These N Channel Logic Level MOSFET have been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
The MOSFET feature faster switching and lower gate
charge than other MOSFET with comparable RDS(on)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
•
3.5 A, 60 V.
R
DS(ON)
= 0.100Ω @ V
GS
= 10 V
R
DS(ON)
= 0.200Ω @ V
GS
= 4.5V
•
Optimized for use in switching DC/DC converters
with PWM controllers
•
Very fast switching
•
Low gate charge.
D2
D
D2
D
D
D1
D1
D
5
6
7
Q1
4
3
2
Q2
SO-8
Pin 1
SO-8
G1
S1
G
G2
S
S2
S
8
1
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
60
±20
(Note 1a)
Units
V
V
A
W
3.5
10
2
1.6
1.0
-55 to +175
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
78 (steady state), 50 (10 sec)
135
40
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS9945
Device
FDS9945
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2001
Fairchild Semiconductor Corporation
FDS9945 Rev B(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
