FDT3612
March 2001
FDT3612
100V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
•
3.7 A, 100 V. R
DS(ON)
= 120 mΩ @ V
GS
= 10 V
R
DS(ON)
= 130 mΩ @ V
GS
= 6 V
•
Fast switching speed
•
Low gate charge (14nC typ)
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability in a
widely used surface mount package
Applications
•
DC/DC converter
•
Motor driving
D
D
D
D
S
D
SOT-223
S
G
G
D
S
SOT-223
*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
100
±20
(Note 1a)
Units
V
V
A
W
3.7
20
3.0
1.3
1.1
–55 to +150
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
3612
2001
Fairchild Semiconductor Corporation
Device
FDT3612
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDT3612 Rev. C1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
