FDT434P
January 2000
FDT434P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Features
•
–5.5 A, –20 V. R
DS(ON)
= 0.050
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.070
Ω
@ V
GS
= –2.5 V.
•
Low gate charge (13nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
.
•
High power and current handling capability in a
widely used surface mount package.
Applications
•
Low Dropout Regulator
•
DC/DC converter
•
Load switch
•
Motor driving
D
D
D
D
S
D
SOT-223
S
G
G
D
S
SOT-223
*
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
W
–6
–30
3
1.3
1.1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
434
Device
FDT434P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
1999
Fairchild Semiconductor Corporation
FDT434P Rev. C1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
