FDD8796/FDU8796 N-Channel PowerTrench
®
MOSFET
March 2006
FDD8796/FDU8796
N-Channel PowerTrench
®
MOSFET
25V, 35A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Features
Max r
DS(on)
=
5.7mΩ at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
=
8.0mΩ at V
GS
= 4.5V, I
D
= 35A
Low gate charge: Q
g(10)
= 37nC(Typ), V
GS
= 10V
Low gate resistance
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
Avalanche rated and 100% tested
RoHS Compliant
LE
A
REE
I
DF
D
M
E
N
TA
TIO
L
E
N
MP
G
D
G D S
I-PAK
(TO-251AA)
S
Short Lead I-PAK
G
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
(Note 1)
(Note 2)
Parameter
Ratings
25
±20
35
98
305
91
88
-55 to 175
mJ
W
°C
A
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO_252, TO_251
Thermal Resistance, Junction to Ambient TO_252, TO_251
Thermal Resistance, Junction to Ambient TO-252,1in copper pad area
2
1.7
100
52
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD8796
FDU8796
FDU8796
Device
FDD8796
FDU8796
FDU8796_F071
Package
TO-252AA
TO-251AA
TO-251AA
1
Reel Size
13’’
N/A (Tube)
N/A (Tube)
Tape Width
12mm
N/A
N/A
Quantity
2500 units
75 units
75 units
www.fairchildsemi.com
©2006 Fairchild Semiconductor Corporation
FDD8796/FDU8796 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
