FDW2506P
October 2000
FDW2506P
Dual P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Features
•
–5.3 A, –20 V,
R
DS(ON)
= 0.022
Ω
@ V
GS
= –4.5 V.
R
DS(ON)
= 0.033
Ω
@ V
GS
= –2.5V.
•
Extended V
GSS
range (±12V) for battery applications
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
Load switch
•
Motor drive
•
DC/DC conversion
•
Power management
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±12
(Note 1)
Units
V
V
A
W
°C
–5.3
–30
1.0
0.6
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
125
208
°C/W
Package Marking and Ordering Information
Device Marking
2506P
2000
Fairchild Semiconductor Corporation
Device
FDW2506P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDW2506P Rev. C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
