FDZ191P P-Channel 1.5V PowerTrench
®
WL-CSP MOSFET
December 2006
FDZ191P
P-Channel 1.5V PowerTrench
®
WL-CSP MOSFET
-20V, -1A, 85mΩ
Features
Max r
DS(on)
= 85mΩ at V
GS
= -4.5V, I
D
= -1A
Max r
DS(on)
= 123mΩ at V
GS
= -2.5V, I
D
= -1A
Max r
DS(on)
= 200mΩ at V
GS
= -1.5V, I
D
= -1A
Occupies only 1.5 mm
2
of PCB area Less than 50% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
RoHS Compliant
tm
General Description
Designed on Fairchild's advanced 1.5V PowerTrench process
with state of the art "low pitch" WLCSP packaging process, the
FDZ191P minimizes both PCB space and r
DS(on)
. This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low r
DS(on)
.
Application
Battery management
Load switch
Battery protection
PIN 1
S
S
D
D
S
G
S
PIN 1
G
BOTTOM
TOP
D
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
P
D
T
J
, T
STG
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
-20
±8
-3
-15
1.5
0.9
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
83
140
°C/W
Package Marking and Ordering Information
Device Marking
1
Device
FDZ191P
Package
WL-CSP
Reel Size
7’’
Tape Width
8mm
Quantity
5000 units
©2006 Fairchild Semiconductor Corporation
FDZ191P Rev.F1 (W)
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
