FES16AT - FES16JT
FES16AT - FES16JT
Features
PIN 1
•
•
•
•
+
CASE
Low forward voltage drop.
PIN 3
High surge current capacity.
High current capability.
High reliability.
1
2
Case Positive
PIN 1
PIN 3
Case Negative
Suffix "R"
-
TO-220AC
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
16AT
16BT
16CT
Value
16DT
16FT
16GT
16HT
16JT
Units
400
500
600
V
A
T
stg
T
J
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
.375 " lead length @ T
A
= 100°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
100
150
200
300
16
250
-65 to +150
-65 to +150
A
V
pF
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
T
A
= 25°C unless otherwise noted
Value
7.81
16
1.2
Units
W
°C/W
°C/W
Electrical Characteristics
Symbol
V
F
t
rr
I
R
Parameter
16AT
16BT
16CT
Device
16DT
16FT
16GT
16HT
16JT
Units
1.3
50
1.5
V
ns
µA
µA
pF
C
T
Forward Voltage @ 8.0A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
Total Capacitance
V
R
= 4.0. f = 1.0 MHz
0.95
35
10
500
170
145
2001
Fairchild Semiconductor Corporation
FES16AT - FES16JT, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
