FQA11N90C_F109 900V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQA11N90C
Device
FQA11N90C_F109
Package
TO-3PN
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 900 V, V
GS
= 0 V
V
DS
= 720 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 5.5 A
V
DS
= 50 V, I
D
= 5.5 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
(Note 4)
Min
900
--
--
--
--
--
3.0
--
--
--
--
--
Typ
--
1.02
--
--
--
--
--
0.91
9.0
2530
215
23
Max Units
--
--
10
100
100
-100
5.0
1.1
--
3290
280
30
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
On Characteristics
Dynamic Characteristics
Switching Characteristics
V
DD
= 450 V, I
D
= 11.0A,
R
G
= 25
Ω
--
--
--
(Note 4, 5)
60
130
130
85
60
13
25
--
--
--
1000
17.0
130
270
270
180
80
--
--
--
--
--
V
DS
= 720 V, I
D
= 11.0A,
V
GS
= 10 V
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
=11.0 A
V
GS
= 0 V, I
S
= 11.0 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
11.0
44
1.4
--
--
A
A
V
ns
µC
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 15mH, I
AS
=11.0A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
11.0A, di/dt
≤200A/µs,
V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
FQA11N90C_F109 Rev. A
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
