FQA12P20
May 2000
QFET
FQA12P20
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
TM
Features
•
•
•
•
•
•
-12.6A, -200V, R
DS(on)
= 0.47Ω @V
GS
= -10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 30 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
S
!
●
●
G
!
▶ ▲
●
G DS
TO-3P
FQA Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQA12P20
-200
-12.6
-7.9
-50.4
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
810
-12.6
15
-5.5
150
1.2
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.83
--
40
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. B, May 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
