FQA5N90
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 2.7 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
6
5
I
D
, Drain Current [A]
4
3
2
1
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
0
( t) , T h e r m a l R e s p o n s e
D = 0 .5
※
N o te s :
1 . Z
θ
J C
( t) = 0 .6 8
℃
/ W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t)
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
s i n g le p u ls e
P
DM
t
1
t
2
Z
θ
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, September 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
