FQH90N15 / FQA90N15 N-Channel Power MOSFET
QFET
FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
• 90A, 150V, R
DS(on)
= 0.018Ω @V
GS
= 10 V
• Low gate charge (typical 220 nC)
• Low C
rss
(typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for low volt-
age applications such as audio amplifire, high efficiency switch-
ing for DC/DC converters, and DC motor control, uninterrupted
power supply.
D
!
"
G
!
G D
S
! "
"
"
TO-247
FQH Series
TO-3P
G DS
FQA Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FQH90N15/FQA90N15
150
90
63.5
360
±25
1400
90
37.5
6.0
375
2.5
-55 to +175
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.4
--
40
Unit
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQH90N15 / FQA90N15 Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
