FQA9N90_F109 900V N-Channel MOSFET
November 2007
QFET
FQA9N90_F109
900V N-Channel MOSFET
Features
•
•
•
•
•
•
•
8.6A, 900V, R
DS(on)
= 1.3Ω @V
GS
= 10 V
Low gate charge ( typical 55 nC)
Low Crss ( typical 25pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
TO-3PN
G DS
FQA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
Parameter
FQA9N90_F109
900
8.6
5.45
34.4
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
900
8.6
24
4.0
240
19.2
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.52
--
40
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQA9N90_F109 Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
