FQP13N10
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
1
175℃
0
10
0
10
25℃
-55℃
※
Notes :
1. V
DS
= 40V
2. 250μ Pulse Test
s
※
Notes :
1. 250μ Pulse Test
s
2. T
C
= 25℃
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
V
GS
= 20V
0.4
I
DR
, Reverse Drain Current [A]
0.6
V
GS
= 10V
10
1
10
0
0.2
175℃
-1
25℃
※
Note : T
J
= 25℃
※
Notes :
1. V
GS
= 0V
2. 250μ Pulse Test
s
0.0
0
10
20
30
40
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
900
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
750
10
V
DS
= 50V
V
DS
= 80V
V
GS
, Gate-Source Voltage [V]
600
8
Capacitance [pF]
C
iss
450
6
C
oss
300
※
Notes :
4
150
C
rss
1. V
GS
= 0 V
2. f = 1 MHz
2
※
Note : I
D
= 12.8A
0
-1
10
0
10
0
10
1
0
2
4
6
8
10
12
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
