FQP33N10
April 2000
QFET
FQP33N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
TM
Features
•
•
•
•
•
•
•
33A, 100V, R
DS(on)
= 0.052Ω @V
GS
= 10 V
Low gate charge ( typical 38 nC)
Low Crss ( typical 62 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
D
!
"
G
G
!
DS
! "
"
"
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP33N10
100
33
23
132
±25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
435
33
12.7
6.0
127
0.85
-55 to +175
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
1.18
--
62.5
Units
°CW
°CW
°CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
