FQP4N80
September 2000
QFET
FQP4N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
TM
Features
•
•
•
•
•
•
3.9A, 800V, R
DS(on)
= 3.6Ω @V
GS
= 10 V
Low gate charge ( typical 19 nC)
Low Crss ( typical 8.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
"
G
!
G DS
3 5
"
"
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP4N80
800
3.9
2.47
15.6
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
460
3.9
13
4.0
130
1.04
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
0.96
--
62.5
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, September 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
