HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D1
H11D2
H11D3
H11D4
4N38
FEATURES
• High Voltage
- H11D1, H11D2, BV
CER
= 300 V
- H11D3, H11D4, BV
CER
= 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700
ANODE 1
6 BASE
APPLICATIONS
•
•
•
•
•
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER
*Forward DC Current
*Reverse Input Voltage
*Forward Current - Peak (1µs pulse, 300pps)
*LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
80
6.0
3.0
150
1.41
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
8/9/00
200046A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
