PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
PACKAGE
SCHEMATIC
ANODE 1
6
OUTPUT
TERM.
6
1
6
CATHODE 2
5
1
3
4
OUTPUT
TERM.
6
1
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-
detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
•
≤
100
Ω
to
≥
300 M
Ω
•
≥
99.9% linearity
•
≤
15 pF shunt capacitance
•
≥
100 G
Ω
I/O isolation resistance
As an analog switch
• Extremely low offset voltage
• 60 V
pk-pk
signal capability
• No charge injection or latch-up
• t
on
, t
off
≤
15 µS
• UL recognized (File #E90700)
• VDE recognized (File #E94766)
– Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor –
• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band switching
As an analog switch –
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
3/19/03
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
