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HUF75345G3 参数 Datasheet PDF下载

HUF75345G3图片预览
型号: HUF75345G3
PDF下载: 下载PDF文件 查看货源
内容描述: 75A , 55V , 0.007 Ohm的N通道UltraFET功率MOSFET [75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs]
分类和应用:
文件页数/大小: 10 页 / 287 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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HUF75345G3, HUF75345P3, HUF75345S3S  
PSPICE Electrical Model  
.SUBCKT HUF75345 2 1 3 ;  
rev 3 Feb 99  
CA 12 8 5.55e-9  
CB 15 14 5.55e-9  
CIN 6 8 3.45e-9  
LDRAIN  
DPLCAP  
5
DRAIN  
2
10  
DBODY 7 5 DBODYMOD  
DBREAK 5 11 DBREAKMOD  
DPLCAP 10 5 DPLCAPMOD  
RLDRAIN  
RSLC1  
51  
DBREAK  
+
RSLC2  
5
51  
ESLC  
11  
EBREAK 11 7 17 18 56.7  
EDS 14 8 5 8 1  
EGS 13 8 6 8 1  
ESG 6 10 6 8 1  
EVTHRES 6 21 19 8 1  
-
50  
+
-
17  
DBODY  
RDRAIN  
6
8
EBREAK 18  
ESG  
-
EVTHRES  
+
+
16  
EVTEMP 20 6 18 22 1  
21  
-
19  
8
MWEAK  
LGATE  
EVTEMP  
+
RGATE  
GATE  
1
6
-
18  
22  
IT 8 17 1  
MMED  
9
20  
MSTRO  
8
RLGATE  
LDRAIN 2 5 1e-9  
LGATE 1 9 2.6e-9  
LSOURCE 3 7 1.1e-9  
KGATE LSOURCE LGATE 0.0085  
LSOURCE  
CIN  
SOURCE  
3
7
RSOURCE  
RLSOURCE  
MMED 16 6 8 8 MMEDMOD  
MSTRO 16 6 8 8 MSTROMOD  
MWEAK 16 21 8 8 MWEAKMOD  
S1A  
S2A  
RBREAK  
12  
15  
13  
8
14  
13  
17  
18  
RBREAK 17 18 RBREAKMOD 1  
RDRAIN 50 16 RDRAINMOD 1e-4  
RGATE 9 20 0.36  
RLDRAIN 2 5 10  
RLGATE 1 9 26  
RLSOURCE 3 7 11  
RSLC1 5 51 RSLCMOD 1e-6  
RSLC2 5 50 1e3  
RSOURCE 8 7 RSOURCEMOD 3.15e-3  
RVTHRES 22 8 RVTHRESMOD 1  
RVTEMP 18 19 RVTEMPMOD 1  
RVTEMP  
19  
-
S1B  
S2B  
13  
CB  
CA  
IT  
14  
+
+
VBAT  
6
8
5
8
EGS  
EDS  
+
-
-
8
22  
RVTHRES  
S1A 6 12 13 8 S1AMOD  
S1B 13 12 13 8 S1BMOD  
S2A 6 15 14 13 S2AMOD  
S2B 13 15 14 13 S2BMOD  
VBAT 22 19 DC 1  
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),3.5))}  
.MODEL DBODYMOD D (IS = 6e-12 RS = 1.4e-3 IKF = 20 XTI = 5 TRS1 = 2.75e-3 TRS2 = 5.0e-6 CJO = 5.5e-9 TT = 5.9e-8 M = 0.5 VJ = 0.75)  
.MODEL DBREAKMOD D (RS = 2.8e-2 IKF = 30 TRS1 = -4.0e-3 TRS2 = 1.0e-6)  
.MODEL DPLCAPMOD D (CJO = 6.75e-9 IS = 1e-30 M = 0.88 VJ = 1.45 FC = 0.5)  
.MODEL MMEDMOD NMOS (VTO = 2.93 KP = 13.75 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.36)  
.MODEL MSTROMOD NMOS (VTO = 3.23 KP = 96 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u Lambda = 0.06)  
.MODEL MWEAKMOD NMOS (VTO = 2.35 KP =0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.6)  
.MODEL RBREAKMOD RES (TC1 = 8.0e-4 TC2 = 4.0e-6)  
.MODEL RDRAINMOD RES (TC1 = 1.5e-1 TC2 = 6.5e-4)  
.MODEL RSLCMOD RES (TC1 = 1.0e-4 TC2 = 1.05e-6)  
.MODEL RSOURCEMOD RES (TC1 = 1.0e-3 TC2 = 0)  
.MODEL RVTHRESMOD RES (TC1 = -1.5e-3 TC2 = -2.6e-5)  
.MODEL RVTEMPMOD RES (TC1 = -2.75e-3 TC2 = 1.45e-6)  
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -9.00 VOFF= -4.00)  
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.00 VOFF= -9.00)  
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 0.50)  
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.50 VOFF= 0.00)  
.ENDS  
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global  
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.  
©2005 Fairchild Semiconductor Corporation  
HUF75345G3, HUF75345P3, HUF75345S3S Rev. B1